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Tungsten silicide is used in microelectronics as a contact material. It is also used as a shunt over polysilicon lines to increase their conductivity and increase signal speed. Further, it acts as a barrier layer between silicon and other metals. In addition to this, it is used in microelectro mechanical systems and for oxidation-resistant coatings. It is also employed as a replacement for earlier tungsten films.
Badran, I.; Kan, W. H.; Shi, Y. J. Structural Changes in Tungsten and Tantalum Wires in Catalytic Chemical Vapor Deposition Using 1, 3-Disilacyclobutane. J. Phys. Chem. C 2015, 119 (33), 19134-19142.
Rogowski, J.; Kubiak, A. Effects of annealing temperature on the structure and electrical properties of tungsten contacts to n-type silicon carbide. Mater. Sci. Eng., B 2015, 191, 57-65.
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