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12055-23-1 - Hafnium(IV) oxide, Spectrographic Grade, 99.9% (metals basis excluding Zr), Zr typically <80ppm - 11836 - Alfa Aesar

11836 Hafnium(IV) oxide, Spectrographic Grade, 99.9% (metals basis excluding Zr), Zr typically <80ppm

CAS-Nummer
12055-23-1
Synonyme

Größe Preis ($) Menge Verfügbarkeit
2g 86,20
10g 297,00
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Hafnium(IV) oxide, Spectrographic Grade, 99.9% (metals basis excluding Zr), Zr typically <80ppm

MDL
MFCD00003565
EINECS
235-013-2

Chemische Eigenschaften

Formel
HfO2
Molmasse
210.49
Form
-325 Mesh Powder
Schmelzpunkt
2774°
Dichte
9.68
Löslichkeit
Insoluble in water.

Anwendungen

Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory material in the insulation of devices such as thermocouples and as a high-κ dielectric in DRAM capacitors. Also, used in the preparation of hafnium tetrachloride.

Bemerkungen

Incompatible with strong oxidizing agents.

Literaturverweise

Choi, J. H.; Mao, Y.; Chang, J. P. Development of hafnium based high-k materials—A review. Mater. Sci. Eng., R Rep. 2011, 72 (6), 97-136.

Zhu, H.; Tang, C.; Fonseca, L. R. C.; Ramprasad, R. Recent progress in ab initio simulations of hafnia-based gate stacks. J. Mater. Sci. 2012, 47 (21), 7399-7416.

Weitere Referenzen

Merck
14,4588
Harmonized Tariff Code
2825.90
TSCA
Yes

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