I agree Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our website without changing the browser settings you grant us permission to store that information on your device.
Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory material in the insulation of devices such as thermocouples and as a high-κ dielectric in DRAM capacitors. Also, used in the preparation of hafnium tetrachloride.
Choi, J. H.; Mao, Y.; Chang, J. P. Development of hafnium based high-k materialsA review. Mater. Sci. Eng., R Rep. 2011, 72 (6), 97-136.
Zhu, H.; Tang, C.; Fonseca, L. R. C.; Ramprasad, R. Recent progress in ab initio simulations of hafnia-based gate stacks. J. Mater. Sci. 2012, 47 (21), 7399-7416.