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13093 Tantalum nitride, 99.5% (metals basis)

CAS-Nummer
12033-62-4
Synonyme

Stock No. Größe Preis ($) Menge Verfügbarkeit
13093-09 10g 47,70
13093-18 50g 215,00
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Tantalum nitride, 99.5% (metals basis)

MDL
MFCD00049568
EINECS
234-788-4

Chemische Eigenschaften

Formel
TaN
Molmasse
194.95
Form
-325 Mesh Powder
Schmelzpunkt
3360°
Storage & Sensitivity
Ambient temperatures.
Löslichkeit
Insoluble in water.

Anwendungen

Tantalum nitride is used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications.

Bemerkungen

Stable under recommended storage conditions. Incompatible with oxidizing agents.

Literaturverweise

Renaud Fix; Roy G.Gordon; David M.Hoffman. Chemical vapor deposition of vanadium, niobium, and tantalum nitride thin films. Chem. Mater. 1993, 5, (5), 614-619

 

M.H.Tsai; S.C.Sun; C.P.Lee; H.T.Chiu; C.E.Tsai; S.H.Chuang; S.C.Wu. Metal-organic chemical vapor deposition of tantalum nitride barrier layers for ULSI applications. Thin Solid Films. 1995, 270, (1-2), 531-536

Weitere Referenzen

Harmonized Tariff Code
2850.00
TSCA
Yes

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