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Tantalum nitride is used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications.
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M.H.Tsai; S.C.Sun; C.P.Lee; H.T.Chiu; C.E.Tsai; S.H.Chuang; S.C.Wu. Metal-organic chemical vapor deposition of tantalum nitride barrier layers for ULSI applications. Thin Solid Films. 1995, 270, (1-2), 531-536