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12055-23-1 - Hafnium(IV) oxide, 99% (metals basis excluding Zr), Zr <1.5% - 11835 - Alfa Aesar

11835 Hafnium(IV) oxide, 99% (metals basis excluding Zr), Zr <1.5%

CAS Number
12055-23-1
Synonyms

Size Price ($) Quantity Availability
25g 75.60
100g 230.00
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Hafnium(IV) oxide, 99% (metals basis excluding Zr), Zr <1.5%

MDL
MFCD00003565
EINECS
235-013-2

Chemical Properties

Formula
HfO2
Formula Weight
210.49
Form
-325 Mesh Powder
Melting point
2774°
Density
9.68
Solubility
Insoluble in water.

Applications

Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory material in the insulation of devices such as thermocouples and as a high-κ dielectric in DRAM capacitors. Also, used in the preparation of hafnium tetrachloride.

Notes

Incompatible with strong oxidizing agents.

Literature References

Lin, T.; Zhang, H.; Sun, H.; Yang, C.; Lin, N. Impurity free vacancy diffusion induced quantum well intermixing based on hafnium dioxide films. Mater. Sci. Semicond. Process. 2015, 29, 150-154.

Zhao, J.; Zhang, Y.; Gong, H.; Zhang, Y.; Wang, X.; Guo, X.; Zhao, Y. Fabrication of high-performance Y2O3 stabilized hafnium dioxide refractories. Ceram. Int. 2015, 41 (4), 5232-5238.

Other References

Merck
14,4588
Harmonized Tariff Code
2825.90
TSCA
Yes

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