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Gallium phosphide (GaP) is used in semiconductor devices, and in the manufacture of light-emitting diodes (LEDs) doped with other elements or in combination with gallium arsenide phosphide. With appropriate dopants, p-type and n-type semiconductors can be produced. It is used in optical systems.
Kornienko, N.; Whitmore, D. D.; Yu, Y.; Leone, S. R.; Yang, P. Solution Phase Synthesis of Indium Gallium Phosphide Alloy Nanowires. ACS Nano. 2015, 9 (4), 3951-3960.
Lin, G.; Zhang, Q.; Lin, X.; Zhao, D.; Jia, R.; Gao, N.; Zuo, Z.; Xu, X.; Liu, D. Enhanced photoluminescence of gallium phosphide by surface plasmon resonances of metallic nanoparticles. RSC Adv. 2015, 5, 48275-48280.
Hazard Statements: H319-H335
Causes serious eye irritation. May cause respiratory irritation.
Precautionary Statements: P261-P280i-P305+P351+P338-P304+P340-P405-P501a
Avoid breathing dust/fume/gas/mist/vapours/spray. Wear eye/face protection. IF IN EYES: Rinse cautiously with water for several minutes. Remove contact lenses, if present and easy to do. Continue rinsing. IF INHALED: Remove to fresh air and keep at rest in a position comfortable for breathing. Store locked up. Dispose of contents/container in accordance with local/regional/national/international regulations.