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Indium(III) phosphide is used in high-power and high-frequency electronics because of its superior electron velocity. It also has a direct band gap, making it useful for optoelectronics devices like laser diodes. It is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
Roman Shchepin; Dhammika H M L P Navarathna; Raluca Dumitru; Shane Lippold; Kenneth W Nickerson; Patrick H Dussault. InP/ZnS as a safer alternative to CdSe/ZnS core/shell quantum dots: in vitro and in vivo toxicity assessment. Nanoscale. 2013, 5 (1), 307-317.
Xuyong Yang; Dewei Zhao; Kheng Swee Leck; Swee Tiam Tan; Yu Xin Tang; Junliang Zhao; Hilmi Volkan Demir; Xiao Wei Sun. Full visible range covering InP/ZnS nanocrystals with high photometric performance and their application to white quantum dot light-emitting diodes. Biomacromolecules. 2012, 24 (30), 4180-4185.
Hazard Statements: H350-H361f-H372
May cause cancer. Suspected of damaging fertility. Causes damage to organs through prolonged or repeated exposure.
Precautionary Statements: P201-P202-P260-P264b-P270-P281-P308+P313-P501c
Obtain special instructions before use. Do not handle until all safety precautions have been read and understood. Do not breathe dust/fume/gas/mist/vapours/spray. Wash face, hands and any exposed skin thoroughly after handling Do not eat, drink or smoke when using this product. Use personal protective equipment as required. IF exposed or concerned: Get medical advice/attention. Dispose of contents/ container to an approved waste disposal plant