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Tris(1-methoxy-2-methyl-2-propoxy)bismuth is used as metal organic precursors to prepare bismuth titanium oxide thin films, which finds application in ferroelectric random access memory.
Akbashev, A. R.; Chen, G.; Spanier, J. E. A facile route for producing single-crystalline epitaxial perovskite oxide thin films. Nano Lett. 2013, 14 (1), 44-49.
Hwang, G. W.; Kim, W. D.; Min, Y. S.; Cho, Y. J.; Hwang, C. S. Characteristics of amorphous Bi2Ti2O7 thin films grown by atomic layer deposition for memory capacitor applications. J. Electrochem. Soc. 2006, 153 (1), F20-F26.
Hazard Statements: H315-H319-H335
Causes skin irritation. Causes serious eye irritation. May cause respiratory irritation.
Precautionary Statements: P261-P280a-P305+P351+P338-P304+P340-P405-P501a
Avoid breathing dust/fume/gas/mist/vapours/spray. Wear protective gloves and eye/face protection. IF IN EYES: Rinse cautiously with water for several minutes. Remove contact lenses, if present and easy to do. Continue rinsing. IF INHALED: Remove to fresh air and keep at rest in a position comfortable for breathing. Store locked up. Dispose of contents/container in accordance with local/regional/national/international regulations.