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Used as the intermediates of OLED, pharmaceuticals.
Naoki Kaneda; Theeradetch Detchprohm; Kazumasa Hiramatsu and Nobuhiko Sawaki. Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane. Japanese Journal of Applied Physics. 2007, 35, (2), 4B.
Toshiharu Takagi; Hiroshi Teranishi; Chiaki Yokoyama; Shinji Takahashi. Ultrasonic speeds and thermodynamic properties for tetramethylsilane, tetraethylsilane and tetraethoxysilane under high pressures. Thermochimica Acta. 1989, 142, (2), 291-299.
Hazard Statements: H226
Flammable liquid and vapour.
Precautionary Statements: P210
Keep away from heat/sparks/open flames/hot surfaces. - No smoking.