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12024-21-4 - Gallium(III) oxide, 99.999% (metals basis) - 10508 - Alfa Aesar

10508 Gallium(III) oxide, 99.999% (metals basis)

Numéro CAS

Dimensions Prix ($) Quantité Disponibilité
5g 64,10
25g 222,00
100g 647,00
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Gallium(III) oxide, 99.999% (metals basis)


Propriétés chimiques

Poids formulaire
-325 Mesh Powder
Point de fusion
Indice de réfraction
Insoluble in water; soluble in most of the acids.


Gallium(III) oxide is used in vacuum deposition. It is useful for making semiconductor devices, gallium-alumina catalyst, gas sensors, luminescent phosphors and dielectric coatings of solar cells. Used as an evaporated material and sputtering target of 99.999% in dielectric films. It shows potential for developing deep-ultraviolet TCOs (Transparent Conductive Oxides) and transparent electrodes for ultraviolet optoelectronic devices. Recent studies report that gallium oxide can be a strong contender for power electronic devices for example in ultrahigh-voltage power switching applications. Films made of gallium oxide have gained commercial interest owing to their gas sensitive characteristics, and glasses made with gallium oxide are the preferred optical materials for use in advanced technologies.


Stored in cool, well ventilated area. Container must be tightly closed.

Références bibliographiques

Li, Y.; Lin, H.; Deng, C.; Yang, P.; Zhang, X. Highly Selective and Rapid Enrichment of Phosphorylated Peptides using Gallium oxide-coated Magnetic Microspheres for MALDI-TOF-MS and Nano-LC-ESI-MS/MS/MS analysis. Proteomics 2008, 8 (2), 238- 249.

Higashiwaki, M.; Sasaki, K.; Kuramata, A.; Masui, T.; Yamakoshi, S. Development of gallium oxide power devices. Phys. Status Solidi A 2014, 211, 21-26.

Rambabu, U.; Munirathnam, N. R.; Prakash, T. L.; Vengalrao, B.; Buddhudu, S. Synthesis and Characterization of Morphologically Different High purity Gallium oxide Nanopowders. J. Mater. Sci. 2007, 42 (22), 9262-9266.

Kumar, S. S.; Rubio, E. J.; Noor-A-Alam, M.; Martinez, G.; Manandhar, S.; Shutthanandan, V.; Thevuthasan, S.; Ramana, C. V. Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films. J. Phys. Chem. C 2013, 117 (8), 4194-4200.

Jianjun, L.; Jinliang, Y.; Liang, S.; Ting, L. Electrical and optical properties of deep ultraviolet transparent conductive Ga2O3/ITO films by magnetron sputtering. J. Semicond. 2010, 31 (10), 103001-103005.

Mentions de danger et de prudence du SGH

Mentions de prudence: P260u-P201-P280-P303+P361+P353-P305+P351+P338-P301+P330+P331-P304+P340-P310a-P405-P501a

Obtain special instructions before use. Wear protective gloves/protective clothing/eye protection/face protection. IF ON SKIN (or hair): Remove/Take off immediately all contaminated clothing. Rinse skin with water/shower. IF IN EYES: Rinse cautiously with water for several minutes. Remove contact lenses, if present and easy to do. Continue rinsing. IF SWALLOWED: Rinse mouth. Do NOT induce vomiting. IF INHALED: Remove to fresh air and keep at rest in a position comfortable for breathing. Store locked up. Dispose of contents/container in accordance with local/regional/national/international regulations.

Autres références

Code tarifaire harmonisé


  • 10709

    Indium(III) oxide, Puratronic®, 99.997% (metals basis)
  • 11289

    Gadolinium(III) oxide, REacton®, 99.999% (REO)
  • 12544

    Indium(III) oxide, 99.99% (metals basis)
  • 13204

    Gadolinium(III) 2,4-pentanedionate hydrate, REacton®, 99.9% (REO)
  • 13387

    Gallium(III) sulfide, 99.99% (metals basis)

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