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12024-21-4 - Gallium(III) oxide, 99.999% (metals basis) - 10508 - Alfa Aesar

10508 Gallium(III) oxide, 99.999% (metals basis)

Numéro CAS
12024-21-4
Synonymes

Dimensions Prix ($) Quantité Disponibilité
5g 58,86
25g 203,40
100g 528,00
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Gallium(III) oxide, 99.999% (metals basis)

MDL
MFCD00011020
EINECS
234-691-7

Propriétés chimiques

Formule
Ga2O3
Poids formulaire
187.44
Forme
-325 Mesh Powder
Point de fusion
1900°
Densité
6.44
Indice de réfraction
1.92
Solubilité
Insoluble in water; soluble in most of the acids.

Applications

Gallium(III) oxide is used in vacuum deposition. It is useful for making semiconductor devices, gallium-alumina catalyst, gas sensors, luminescent phosphors and dielectric coatings of solar cells. Used as an evaporated material and sputtering target of 99.999% in dielectric films. It shows potential for developing deep-ultraviolet TCOs (Transparent Conductive Oxides) and transparent electrodes for ultraviolet optoelectronic devices. Recent studies report that gallium oxide can be a strong contender for power electronic devices for example in ultrahigh-voltage power switching applications. Films made of gallium oxide have gained commercial interest owing to their gas sensitive characteristics, and glasses made with gallium oxide are the preferred optical materials for use in advanced technologies.

Notes

Stored in cool, well ventilated area. Container must be tightly closed.

Références bibliographiques

Li, Y.; Lin, H.; Deng, C.; Yang, P.; Zhang, X. Highly Selective and Rapid Enrichment of Phosphorylated Peptides using Gallium oxide-coated Magnetic Microspheres for MALDI-TOF-MS and Nano-LC-ESI-MS/MS/MS analysis. Proteomics 2008, 8 (2), 238- 249.

Higashiwaki, M.; Sasaki, K.; Kuramata, A.; Masui, T.; Yamakoshi, S. Development of gallium oxide power devices. Phys. Status Solidi A 2014, 211, 21-26.

Rambabu, U.; Munirathnam, N. R.; Prakash, T. L.; Vengalrao, B.; Buddhudu, S. Synthesis and Characterization of Morphologically Different High purity Gallium oxide Nanopowders. J. Mater. Sci. 2007, 42 (22), 9262-9266.

Kumar, S. S.; Rubio, E. J.; Noor-A-Alam, M.; Martinez, G.; Manandhar, S.; Shutthanandan, V.; Thevuthasan, S.; Ramana, C. V. Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films. J. Phys. Chem. C 2013, 117 (8), 4194-4200.

Jianjun, L.; Jinliang, Y.; Liang, S.; Ting, L. Electrical and optical properties of deep ultraviolet transparent conductive Ga2O3/ITO films by magnetron sputtering. J. Semicond. 2010, 31 (10), 103001-103005.

Autres références

Merck
14,4346
Code tarifaire harmonisé
2825.90
TSCA
Yes

Recommandé

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    Indium(III) oxide, Puratronic®, 99.997% (metals basis)
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    Gadolinium(III) oxide, REacton®, 99.999% (REO)
  • 12544

    Indium(III) oxide, 99.99% (metals basis)
  • 13204

    Gadolinium(III) 2,4-pentanedionate hydrate, REacton®, 99.9% (REO)
  • 13387

    Gallium(III) sulfide, 99.99% (metals basis)

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