Informativa e consenso per l'uso dei cookie

Accetto Il nostro sito salva piccoli pezzi di informazioni (cookie) sul dispositivo, al fine di fornire contenuti migliori e per scopi statistici. È possibile disattivare l'utilizzo di cookies modificando le impostazioni del tuo browser. Continuando la navigazione si acconsente all'utilizzo dei cookie.

12024-21-4 - Gallium(III) oxide, 99.999% (metals basis) - 10508 - Alfa Aesar

10508 Gallium(III) oxide, 99.999% (metals basis)

Codice CAS

Dimensioni Prezzo ($) Quantità Disponibilità
5g 64,10
25g 222,00
100g 647,00
Aggiungi al carrello Aggiungi al preventivo generale Visualizza articolo

Gallium(III) oxide, 99.999% (metals basis)


Proprietà chimiche

Peso formula
-325 Mesh Powder
Punto di fusione
Indice di rifrazione
Insoluble in water; soluble in most of the acids.


Gallium(III) oxide is used in vacuum deposition. It is useful for making semiconductor devices, gallium-alumina catalyst, gas sensors, luminescent phosphors and dielectric coatings of solar cells. Used as an evaporated material and sputtering target of 99.999% in dielectric films. It shows potential for developing deep-ultraviolet TCOs (Transparent Conductive Oxides) and transparent electrodes for ultraviolet optoelectronic devices. Recent studies report that gallium oxide can be a strong contender for power electronic devices for example in ultrahigh-voltage power switching applications. Films made of gallium oxide have gained commercial interest owing to their gas sensitive characteristics, and glasses made with gallium oxide are the preferred optical materials for use in advanced technologies.


Stored in cool, well ventilated area. Container must be tightly closed.


Li, Y.; Lin, H.; Deng, C.; Yang, P.; Zhang, X. Highly Selective and Rapid Enrichment of Phosphorylated Peptides using Gallium oxide-coated Magnetic Microspheres for MALDI-TOF-MS and Nano-LC-ESI-MS/MS/MS analysis. Proteomics 2008, 8 (2), 238- 249.

Higashiwaki, M.; Sasaki, K.; Kuramata, A.; Masui, T.; Yamakoshi, S. Development of gallium oxide power devices. Phys. Status Solidi A 2014, 211, 21-26.

Rambabu, U.; Munirathnam, N. R.; Prakash, T. L.; Vengalrao, B.; Buddhudu, S. Synthesis and Characterization of Morphologically Different High purity Gallium oxide Nanopowders. J. Mater. Sci. 2007, 42 (22), 9262-9266.

Kumar, S. S.; Rubio, E. J.; Noor-A-Alam, M.; Martinez, G.; Manandhar, S.; Shutthanandan, V.; Thevuthasan, S.; Ramana, C. V. Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films. J. Phys. Chem. C 2013, 117 (8), 4194-4200.

Jianjun, L.; Jinliang, Y.; Liang, S.; Ting, L. Electrical and optical properties of deep ultraviolet transparent conductive Ga2O3/ITO films by magnetron sputtering. J. Semicond. 2010, 31 (10), 103001-103005.

Rischio GHS e dichiarazioni precauzionali

Dichiarazioni precauzionali: P260u-P201-P280-P303+P361+P353-P305+P351+P338-P301+P330+P331-P304+P340-P310a-P405-P501a

Obtain special instructions before use. Wear protective gloves/protective clothing/eye protection/face protection. IF ON SKIN (or hair): Remove/Take off immediately all contaminated clothing. Rinse skin with water/shower. IF IN EYES: Rinse cautiously with water for several minutes. Remove contact lenses, if present and easy to do. Continue rinsing. IF SWALLOWED: Rinse mouth. Do NOT induce vomiting. IF INHALED: Remove to fresh air and keep at rest in a position comfortable for breathing. Store locked up. Dispose of contents/container in accordance with local/regional/national/international regulations.

Altri riferimenti

Codice tariffe armonizzato


  • 10709

    Indium(III) oxide, Puratronic®, 99.997% (metals basis)
  • 11289

    Gadolinium(III) oxide, REacton®, 99.999% (REO)
  • 12544

    Indium(III) oxide, 99.99% (metals basis)
  • 13204

    Gadolinium(III) 2,4-pentanedionate hydrate, REacton®, 99.9% (REO)
  • 13387

    Gallium(III) sulfide, 99.99% (metals basis)

Visualizzati di recente

Prodotti chimici

Scienze della vita

Metalli e materiali


Apparecchiature di analisi e di laboratorio