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In the electronics industry as a liquid encapsulent for Czochralski-type growth of III-V semiconductor single crystals (e.g., GaAs, GaP, InP).Boron oxide is used as a flux, an acid catalyst and a chemical intermediate in the production of boron halides, esters, carbide, nitride and metallic borides. It has shown a promising effect on glycerol hydrogenolysis to 1,2-propanediol. It is also an essential material for the preparation of cordierite ceramics from talc. It is actively involved in the production of borosilicate glass. It is an additive used in high-temperature lubricants, heatproof glasswares and dopants in semiconductor materials.
Kline, J.; Tangstad, M.; Tranell, G. A Raman Spectroscopic Study of the Structural Modifications Associated with the Addition of Calcium Oxide and Boron Oxide to Silica. Metall. Mater. Trans. B 2015, 46 (1), 62-73.
Elshina, L. A.; Malkov, V. B.; Molchanova, N. G. Formation of titanium diboride coatings during the anodic polarization of titanium in a chloride melt with a low boron oxide content. Russ. Metall. 2015, 2015 (2), 162-169.
Dichiarazioni di rischio (UE): H360
May damage fertility or the unborn child.
Dichiarazioni precauzionali: P260-P201-P280-P304+P340-P405-P501a
Do not breathe dust/fume/gas/mist/vapours/spray. Obtain special instructions before use. Wear protective gloves/protective clothing/eye protection/face protection. IF INHALED: Remove to fresh air and keep at rest in a position comfortable for breathing. Store locked up. Dispose of contents/container in accordance with local/regional/national/international regulations.