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Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory material in the insulation of devices such as thermocouples and as a high-κ dielectric in DRAM capacitors. Also, used in the preparation of hafnium tetrachloride.
Lin, T.; Zhang, H.; Sun, H.; Yang, C.; Lin, N. Impurity free vacancy diffusion induced quantum well intermixing based on hafnium dioxide films. Mater. Sci. Semicond. Process. 2015, 29, 150-154.
Zhao, J.; Zhang, Y.; Gong, H.; Zhang, Y.; Wang, X.; Guo, X.; Zhao, Y. Fabrication of high-performance Y2O3 stabilized hafnium dioxide refractories. Ceram. Int. 2015, 41 (4), 5232-5238.
Dichiarazioni precauzionali: P260-P201-P280-P304+P340-P405-P501a
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