Accetto Utilizziamo cookies per migliorare il nostro servizio e realizzare statistiche. Questa funzione puó essere disattivata cambiando la configurazione del browser. Continuando a navigare senza modificare questi parametri, consideriamo che l’uso di cookies sia accettato
InP is used in high-power and high-frequency electronics because of its superior electron velocity. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. It is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
Roman Shchepin; Dhammika H M L P Navarathna; Raluca Dumitru; Shane Lippold; Kenneth W Nickerson; Patrick H Dussault. InP/ZnS as a safer alternative to CdSe/ZnS core/shell quantum dots: in vitro and in vivo toxicity assessment. Nanoscale. 2013, 5 (1), 307-317.
Xuyong Yang; Dewei Zhao; Kheng Swee Leck; Swee Tiam Tan; Yu Xin Tang; Junliang Zhao; Hilmi Volkan Demir; Xiao Wei Sun. Full visible range covering InP/ZnS nanocrystals with high photometric performance and their application to white quantum dot light-emitting diodes. Biomacromolecules. 2012, 24 (30), 4180-4185.
Dichiarazioni di rischio (UE): H351
Suspected of causing cancer.
Dichiarazioni precauzionali: P201-P280-P202-P308+P313-P405-P501a
Obtain special instructions before use. Wear protective gloves/protective clothing/eye protection/face protection. Do not handle until all safety precautions have been read and understood. IF exposed or concerned: Get medical advice/attention. Store locked up. Dispose of contents/container in accordance with local/regional/national/international regulations.